| 摘要 |
PURPOSE:To avoid an improper leakage, to reduce the number of steps and to decrease its cost by forming the diameter of the second hole of an insulating layer larger than that of the first hole, and forming a metal sphere having a diameter larger than the thickness of the layer on a pad exposed from the second hole. CONSTITUTION:After a pad 13 is formed through an insulating film 12 on a semiconductor substrate 11, a PSG film 14 is formed as an interlayer insulating film on the overall surface, the film 14 is selectively etched and removed, and the first hole 15 is opened. Then, after an insulating layer 16 made of polyimide resin is formed on the overall surface, the second hole 17 having a diameter smaller than that of the hole 15 is opened at the layer 16 corresponding to the hole 15, and the resin is then cured. Further, a metal sphere 18 made of gold is attracted to a bonding head, the sphere 18 is press-bonded onto the pad 13 on the heated substrate 11 while applying a supersonic wave or the like. Similarly, a metal sphere is thermally bonded to the other prescribed bed, treated by dicing step and a semiconductor device is manufactured. |
