| 摘要 |
PURPOSE:To increase the effective quantity of an alloy spike, and to obtain a Schottky barrier diode having excellent characteristics easily by zigzag forming a contact region, arranging holes around the contact region and augmenting peripheral length. CONSTITUTION:An N<+> type contact region 26 is extended zigzag on the surface of an epitaxial layer 22 extending over a long distance, and the peripheral length of the contact region 26 is increased. Holes 25 are formed to an insulating layer 24 in the periphery of the contact region 26 through etching. The holes 25 are shaped separated at regular intervals from the contact region 26 as shown in a dotted line, and formed in an entering manner in response to the zigzag of the contact region 26. Consequently, the peripheral length of the holes 25 opposite to the contact region 26 also increases similarly. An anode electrode 27 is applied on the holes 25 and the contact region 26 as shown in a dot-broken line and formed so as to approximately cover the whole surface with the exception of one end of the contact region 26. A cathode electrode 28 is formed so as to be in ohmic-contact with one end of the contact region 26. |
