| 摘要 |
PURPOSE:To obtain a MIS type transistor, carrier-mobility thereof hardly lowers because the surface state thereof is difficult to increase even when hot carriers are injected, by changing an insulating film in the vicinity of a drain or a source electrode into SiON. CONSTITUTION:LOCOS2 is formed on a p type (100) Si substrate 1, and a gate oxide film 3 in 20nm thickness is shaped through the oxidation of a gate. A po polysilicon gate 4 is shaped through the implantation of electrns, the deposition of polysilicon and the deposition of phosphorus and through a gate processing process. A region 5 containing a partial oxide film under the gate is changed into oxynitride through NH3 annealing for 1hr at 1,000 deg.C. A diffusion layer 6 is shaped through light oxidation, SD implantation and N2 annealing. Lastly, the state shown in the figure (e) is brought through the deposition of PSG, a contact processing process, the deposition of Al and an Al processing process, and preparation is completed through a passivation process. |
