| 摘要 |
PURPOSE:To reduce the resistance of a polysilicon electrode substantially, by setting a temperature at which doping of an impurity is effected to grow a polysilicon film over 700 deg.C and below 900 deg.C. CONSTITUTION:An impurity is diffused on the surface of a semiconductor substrate 1 to form a diffusion layer 2 for junction. The diffusion layer 2 is doped with an impurity for reducing the resistance so as to grow a polysilicon film thereon. The grown polysilicon layer is then heat treated to constitute a polysilicon electrode 3. A temperature at which the polysilicon film is grown is set over 700 deg.C and below 900 deg.C. In such a manner, the resistance of the electrode 3 is substantially reduced. |
