| 摘要 |
PURPOSE:To connect a gate metal and an ohmic metal directly, by performing heat treatment for obtaining alloy after the formation of an ohmic electrode and the ohmic metal, selectively forming a metal film having excellent adhesion property on the ohmic metal, and forming the gate metal. CONSTITUTION:An (Au.Ge+Au) film is formed on a compound semiconductor substrate 1. Then patterning is performed and an ohmic metal 2 is formed. Alloy-forming treatment of the metal 2 is performed. Then a metal film 3 having excellent adhesion property such as Ti, Pt or the like is formed. Thereafter, patterning of the film 3 is performed and a (Ti+Pt+Au) film is formed. Then patterning is performed, and a gate metal 4 is formed. The metal 2 and the metal 4 are directly connected through the film 3 having excellent adhesion to both metals. |
