发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To prevent the deterioration of a laser element due to thermal stress and the damage of the laser element due to excessive voltage, by attaching the laser element by using a Zener element, whose thermal expansion coefficient is close to that of the laser element, and connecting both elements in reverse parallel. CONSTITUTION:Attachment of a semiconductor laser element 10 to a heat radiating metal block 30 is performed by way of a Zener diode 11 comprising silicon, whose thermal expansion coefficient is close to that of the laser element 10. Thus the thermal stress, which is applied to the semiconductor element is alleviated. The semiconductor laser element 10 and the Zener diode 11 are connected in reverse parallel. Excessive reverse bias voltages, which are applied to the semiconductor element 10, are absorbed by the Zener diode 11 in this constitution.
申请公布号 JPS60169185(A) 申请公布日期 1985.09.02
申请号 JP19840026459 申请日期 1984.02.13
申请人 MITSUBISHI DENKI KK 发明人 KAKIMOTO SHIYOUICHI;ISHII MITSUO
分类号 H01S5/00;H01S5/022;H01S5/024;H01S5/042 主分类号 H01S5/00
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