| 摘要 |
PURPOSE:To manufacture many devices on the cleavage plane of an MgO crystal, by forming an MgO thin film on the surface of an Si substrate by sputtering, and forming an NbN thin film thereon by sputtering. CONSTITUTION:An MgO thin film is formed on the surface of an Si substrate at discharge Ar gas pressure of 50mTorr, a film forming speed of about 3nm/min and a substrate temperature of 300 deg.C by sputtering. Then an NbN thin film is continuously formed on the MgO thin film, which is obtained before, at discharge gas pressure P(Ar+N2)approx.=30mTorr, a substrate temperature of 300 deg.C, film forming speed of about 14nm/min and PDapprox.=0.1Torr.cm by sputtering. Then, MgO is oriented on the plane (200) on the Si substrate. The plane (100) of NbN0.75 is epitaxially grown on the plane (100). The NbN thin film, whose critical temperature TC is relatively high can be formed. |
