| 摘要 |
PURPOSE:To reduce the thickness of an insulating film and thereby to realize a microstructure output MOS-FET by a method wherein the gate insulating film for the MOS-FET is composed only of an SiO2 layer that is formed simultaneously with the oxidation of the surface of first layer polycrystalline silicon electrodes at a CCD forming location. CONSTITUTION:An SiO2 layer 5 and SiN layer 6 are formed on a semiconductor substrate 1 and then, in a CCD forming location 2, first alyer polycrystalline silicon electrodes 7 are formed on the SiN layer 6 to serve as charge transfer electrodes. The SiO2 layer 5 and SiN alyer 6 are subjected to selective removal, only from a location 4 to develop into a gate in a output MOS-FET forming location 3. Oxidation is accomplished for the formation of an oxide film 8a on top of the first layer polycrystalline silicon electrodes 7 and, simultaneously, of a gate oxide film 8b in the output MOS-FET forming location 3. Next, a second alyer polycrystalline silicon is formed, and then subjected to patterning for the formation of a second alyer polycrystalline silicon gate electrode 9 in the output MOS-FET forming lcoation 3 and, simultaneously, of a plurality of second layer polycrystalline silicon electrodes 10 to serve as charge transfer electrodes between the first layer polycrystalline silicon electrodes 7 in the CCD forming location 2. |
