| 摘要 |
PURPOSE:To write informations only by selecting diffusion layer masks by writing informations according to the formation of a third semiconductor layer, which is shaped along a semiconductor layer for a gate electrode in a self-alignment manner and connected to a first semiconductor layer and a second semiconductor layer. CONSTITUTION:A thick thermal oxide film 2 is shaped onto a silicon substrate 1, the thermal oxide film 2 on a semiconductor layer connected to a GND line and an output line, a section as a source connected to the GND line and a section as a drain connected to a semiconductor layer connected to the output line is removed, and a thin gate oxide film 3 is formed. A polycrystalline silicon layer 4 is shaped onto the whole surface. A gate 4a and an input line 4b are formed through selective etching. A window for shaping the GND line and a window for forming the semiconductor layer connected to the output line are bored at the same time as the formation of the gate 4a and the input line 4b, and the GND line, a diffusion layer 5 as the source and a diffusion layer 6 as a semiconductor layer connected to the drain and the output line are shaped. An oxide film 7 is formed onto the whole surface, the oxide film on the surface of the diffusion layer 6 connected to the drain and the output line is window-bored, and the output line is shaped. |
