| 摘要 |
PURPOSE:To manufacture a semiconductor laser element with a flat active layer through an easy manufacture by using a substrate formed by inclining the substrate only by a predetermined angle to a prescribed surface. CONSTITUTION:The main surface of a substrate is shaped within a range of ¦theta2¦<=¦theta1¦, ¦theta2¦<=6' and ¦theta1¦<=10' at a time when displacement in the direction par allel with the longitudinal direction of a striped groove in the <110> direction is theta1 and displacement in the direction vertical to the longitudinal direction parallel is theta2. When theta2 is large, an active layer is bent bilaterally asymmetrically on the groove because not only a step is easy to be generated originally in the direction with the longitudinal direction of the groove but also the inclination is further promoted by the groove. When theta1 is too large, the ratio g/v of a growth rate (g) burying the groove to the growth rate (v) of a section in which there exists no groove is made smaller than the ratio on the above-mentioned setting, the active layer is bent, and an element, the active layer thereof is flat on the groove required for a CSP laser, is not obtained. |
