发明名称 Improvement to the process of growth in a solvent zone of single crystals exhibiting high vapour pressures and apparatus for its use
摘要 Oven for the recrystallisation in the form of single crystals of semiconductor compounds in solvent zones. This oven comprises a central oven 16 in which the recrystallisation in a solvent zone 6 is performed, a first side auxiliary oven 18 in which the compound is present in polycrystalline form 2 and a second side auxiliary oven 20 in which the compound is present in single-crystal form, the two auxiliary ovens 18, 20 being heated to temperatures TM which are lower than that of the central oven 16 in order to maintain the vapour pressures of the constituents of said compound in equilibrium with the solvent zone 6. <IMAGE>
申请公布号 FR2560225(A1) 申请公布日期 1985.08.30
申请号 FR19830013386 申请日期 1983.08.17
申请人 CIE GENERALE D ELECTRICITE 发明人 ALAIN FILLOT, JEAN GALLET, SYLVAIN PALTRIER ET BERNARD SCHAUB;GALLET JEAN;PALTRIER SYLVAIN;SCHAUB BERNARD
分类号 C30B13/02;C30B13/08;(IPC1-7):C30B29/46 主分类号 C30B13/02
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