| 摘要 |
PURPOSE:To manufacture a non-self aligning type thin-film transistor having high performance, in which the surface-state density of the interface is reduced, on a transparent insulating substrate having a low heat-resistant temperature by forming a drain electrode and a source electrode through a lift-off method in order to keep the interface between a semiconductor thin-film and a gate insulating film clean. CONSTITUTION:A semiconductor thin-film 8 is deposited on a transparent insulating substrate 7, and an insulating film 9 is deposited through a normal pressure CVD method, a decompression CVD method, a plasma CVD method or a sputtering method. The insulating film 9 is patterned, and the semiconductor thin-film 8 is patterned, thus forming the approximate shape of a thin-film transistor. Resists 10 having patterns for a drain electrode and a source electrode are shaped, and the insulating film 9 is etched first while using said resists 10 as masks. A constitutional material 11 for the drain electrode and the source electrode is deposited. The resists 10 are peeled, and the drain electrode 12 and the source electrode 13 are formed through a lift-off method. A gate insulating film 14 is deposited, and a gate electrode 15 is shaped on the insulating film 14. |
