发明名称 SEMICONDUCTOR DEVICE WITH CAPACITOR
摘要 PURPOSE:To attain the titled device having a large capacitance without increasing the element area, by utilizing the junction capacitance of the part other than the elements necessary to construct from an (n) input internal gate to an n'Xn input internal gate in n' pieces formed on the same substrate. CONSTITUTION:In the diagram, the resistors 12, 13, and 16 and the transistors 14 and 15 of a 3 input internal gate G2 encircled by a right side dot line are parts not used for construction of the logic in a 6 input internal gate constructed as above, i.e. the unnecessary element parts. The junction capacitances of these unnecessary element parts are to be positively utilized; that is, in the 6 input internal gate of NTL construction shown in the diagram, these junction capacitances are added in parallel between both terminals of the emitter resistor 13 of an input gate transistor 11, thus speeding up the 6 input internal gate without increasing the element area.
申请公布号 JPS60167443(A) 申请公布日期 1985.08.30
申请号 JP19840021811 申请日期 1984.02.10
申请人 HITACHI SEISAKUSHO KK;NIPPON DENSHIN DENWA KOSHA 发明人 KATOU HIROMASA;USAMI MITSUO;ISHII SHIYUUICHI;HORIGUCHI KATSUJI;SUZUKI MASAO
分类号 H01L27/04;H01L21/82;H01L21/822;H01L21/8222;H01L27/06;H01L27/118 主分类号 H01L27/04
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