| 摘要 |
PURPOSE:To obtain a Schottky electrode having extremely high precision of size at manufacture of a semiconductor device by a method wherein ion beam etching according to inactive gas ions is used for etching of a bonding material consisting of a noble metal, and plasma etching according to radical gas is used for etching of a Schottky electrode material. CONSTITUTION:Titanium 12 is adhered as a Schottky metal on an N type InP substrate 11, and gold 13 is adhered continuously as a bonding material. The metals thereof are formed according to EB evaporation, film thickness of the titanium 12 is made to 2,000Angstrom , and film thickness of the gold 13 is made to 3,000Angstrom . Patterning is performed according to a photo resist for processing of an electrode, the gold 13 is etched according to ion beam etching, and the titanium 12 is etched according to plasma etching. At ion beam etching thereof, although the titanium 12 is exposed after etching of the gold 13, but because the etching speed of titanium is small as 20Angstrom /min, etching is stopped at the interface between the gold 13 and the titanium 12. Similarly at plasma etching, because the etching speed of InP is small as 10Angstrom /min, and etching is stopped at the interface between the titanium 12 and the InP 11, the materials thereof can be etched having favorable controllability. |
