| 摘要 |
PURPOSE:To prevent generation of a resist pattern deffect owing to foreign matter by providing a light transmittable high polymer film on cross patterns. CONSTITUTION:A high polymer film 10 consisting of, for example, polymethyl methacrylate, etc. having the light transmittability equal to the light transmittability of glass is formed on the cross pattern 2 surface of a photomask. Foreign matter 11 sticks consequently onto the film 10 and since the irradiating light is focused to the cross pattern part 2, said light is not focused to the foreign matter 11 on the film 10 existing in the position shifted therefrom. The defect by the transfer pattern occuring in the foreign matter is thus eliminated with a resist pattern part 8 and the photomask is used for production of an integrated semiconductor circuit device requiring the fine pattern. |
