| 摘要 |
PURPOSE:To enable to detect perfectly without generating an omission of a foreign matter and a crack which cause interfere with exposure of a semiconductor substrate containing a transparent foreign matter at the inspection of a photo mask by a method wherein light of the same wavelength with light to be used for exposure of a photo resist on the surface of the semiconductor substrate is used as irradiating light for the inspection. CONSTITUTION:A light source similar to a light source to be used when a photo resist applied on the surface of a wafer is to be exposured using a photo mask 3 to be inspected, a high pressure mercury lamp for example, is used as a light source 6. Ultraviolet rays of wavelength of about 400nm radiated from the light source 6 thereof pass the light transmitting part of the photo mask 3 to be inspected, and after focused according to an optical system 7 constructed by using mirrors as not to absorb the ultraviolet rays, converted into an electric signal according to a defect detector 8. As the defect detector 8 thereof, it is favorable when ultraviolet rays are converted into a visible beam by projecting to a fluorescent substance to absorb light of wavelength thereof, and visible light thereof is converted into the electric signal according to a photoelectric converter 4 consisting of a CCD linear image sensor, etc. Thus obtained electric signal is processed by a defect recognizing circuit 5 as usual, and a defect is detected. |
