| 摘要 |
<p>PURPOSE:To form photosensors of high S/N ratio and excellent uniformity by a method wherein heat treatment is carried out after an ohmic contact layer of the unnecessary part is removed by the plasma etching method at the time of manufacturing the photosensor. CONSTITUTION:A photoconductive layer (intrinsic layer) 22 made of a-Si is provided on a glass substrate 21 by the glow discharge method. Similarly, an n<+> layer 23 is provided by the glow discharge method. Next, a conductive layer 24 is formed by depositing Al by the electron beam evaporation method, and then the conductive layer 24 in the part serving as the photoelectric conversion part is removed; thus, a common electrode 25 and a discrete electrode 26 are formed. The n<+> layer 23 in the part of the photoelectric conversion part is removed, and the n<+> layer 23 in the exposed part and a part of the surface layer of the conductive layer 22 are removed. Thereafter, heat treatment is carried out.</p> |
