| 摘要 |
PURPOSE:To manufacture light-emitting elements having planar and striped structure with high manufacturing capability and reliability, particularly, a light- emitting element in striped width of several micron or less, very easily by utilizing the increase of a diffusion rate in a stress field. CONSTITUTION:A wafer in which an n type AlxGa1-xAs layer 12, a p or n type GaAs active layer 13, an n type AlxGa1-xAs layer 14 and an n type GaAs layer 15 as the last are formed on an n type GaAs substrate 11 in succession through a continuous epitaxial method is prepared, a mask SiO2 film 16 is shaped on the surface of the n type GaAs layer 15 through a sputtering method, and the SiO2 film is removed selectively in a striped manner by using a photo- resist technique to form windows 17 for diffusion. Spiky diffusion sections 17 are formed just under mask ends while penetrating a semiconductor layer constituting at least a wafer surface by keeping diffusion depth from the surface of said exposed wafer separate from the ends of masks 16 by at least 5mum or more within the centuple of mask thickness at that time. |
