| 摘要 |
PURPOSE:To transfer charges in the direction vertical to the surface of a semiconductor by forming a gate electrode at a position, which faces to a charge injecting section and is located close by said injecting section. CONSTITUTION:Stored electrons 11 are transferred to an output section 4 through the lower section of a gate electrode 3-2 at a timing C. (c) Represents potential at a timing D, and an N region 2 is reverse-biassed to a substrate, and brought to a floating state. (d) Represents potential at a timing E, and electrons 10 generated through optical irradiation, etc. are stored in the N region. Potential drops as shown in a broken line in (d) at a timing F, and electrons 10 generated through optical projection are transferred to the lower section of a gate electrode 3-1. Accordingly, charges injected through optical projection or electrically from the surface of a semiconductor can be transferred in the direction vertical to the surface of the semiconductor. |
