发明名称 Process for the preparation of a solvent zone for the production of semiconductive compounds
摘要 Process for the preparation of a binary initial solvent zone for crystallising in the form of a single crystal a ternary or quaternary compound of determined composition S, containing Cd and Hg, consisting in choosing, on the phase equilibrium diagram of the compound, the Cd and Hg concentration and the temperature TA, TA', at which the crystallisation must be performed, the initial solvent zone raised to this temperature being capable of dissolving the compound S until a solvent zone in thermodynamic equilibrium with it is obtained and from which the crystallisation is carried out, and in determining on the diagram the composition C, C' of the initial solvent zone and the temperature TC, TC' at which it must be prepared. <IMAGE>
申请公布号 FR2560227(A1) 申请公布日期 1985.08.30
申请号 FR19830013388 申请日期 1983.08.17
申请人 CIE GENERALE D ELECTRICITE 发明人 ALAIN FILLOT, JEAN GALLET, SYLVAIN PALTRIER ET BERNARD SCHAUB
分类号 C30B13/00;C30B13/02 主分类号 C30B13/00
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