| 摘要 |
PURPOSE:To increase a rate of effective processing part by accommodating a reaction box to which the reaction gas is supplied within a reaction furnace. CONSTITUTION:A wafer 15 as the processing object is held under the condition as being arranged standing on a jig 14. After a cover 5 is closed, a reaction box 3 accommodating the jig 14 is inserted and positioned within a reaction furnace 1. Thereafter, the inside of reaction furnace 1 is heated. When the inside the furnace is stabilized at the predetermined temperature, the reaction gas is supplied to the reaction box 3. The reaction gas supplied diffuses at the inside of cover 5 from the supply hole 12 and uniformly injected into the side of body 4 from many small holes 11 in the form of shower. Simultaneously, since the exhaustion path 9 is attracted by a negative pressure source like a vacuum pump, etc., the reaction gas injected from small holes 11 passes straight between the wafers 15 as the flow of layer in such a way as being absorbed into small holes 7 of the bottom plate 6. The reaction gas absorbed by the small holes 7 for absorption is collected to the exhaustion hole 6 and is exhausted passing an exhaustion path 9. |
