| 摘要 |
PURPOSE:To simplify the manufacturing process for photoconductive photosensor array of matrix-driven type by a method wherein an insulation layer of the multilayer wiring part and that of the photoelectric conversion part are successively formed of the same material. CONSTITUTION:A photoconductive layer 2 made of amorphous Si is formed on the surface of a glass plate substrate 1 by the CVD method, and next an n<+> layer made of amorphous Si is attached thereon by the CVD method. Further, an Al conductive layer is added by the vacuum sputtering method and then formed into photosensor electrodes 4 and 5 of required form by the photolithography technique, and the exposed part of said n<+> layer is removed by dry etching, redulting in the formation of an ohmic contact layer 3. Thereafter, polyimide resin is applied by spinner and heat-treated, and a through hole 8 is formed by the photolithography technique. Then, an Al conductive layer is added by the vacuum sputtering method and formed into drive circuit electrodes 7 of required form by the photolithography technique. |
