| 摘要 |
Radio-frequency devices operate in the 1-12 Gigahertz range, thus incurring considerable technical expense. The invention addresses this problem. A radio-frequency device can be constructed which comprises four components only. 1 NPN silicon RF transistor BF 199 1 resistor, 120 ohms 1 coil 1 battery, 1.2 volts The negative pole of the battery is soldered to the mid-tap of the transistor. The coil is soldered between the outer transistor wires. The resistor is soldered between the base and the positive pole of the battery. Resonant circuits from 10-500 MHz can be produced with this structure, with power consumption amounting to 5-12 mA at 1.2 volts.
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