| 摘要 |
<p>Process for forming devices, such as photodiodes based on III-V semiconductor materials, utilizing a CVD epitaxial procedure. This procedure includes, for example, forming at least one precursor gas flow, subjecting a substrate (55) to said flow to deposit a material, and completing the device. At least one of said precursor gas flows is formed from at least one liquid source gas flow and at least one solid source gas flow. Said at least one solid source gas flow is formed by subjecting a heated solid (e.g., 32 ,33) to a chlorine entity-containing gas flow, and said at least one liquid source gas flow is formed by subjecting a liquid to a chlorine entity-containing gas flow.</p> |
