| 摘要 |
PURPOSE:To obtain electrodes in a self-aligning manner by providing many sets of the first and second electrodes through an insulating film while superposing the ends when forming a CCD by providing many electrodes through an insulating film on a semiconductor substrate, and providing the same conductive type third electrodes as the substrate on the substrate exposed between these sets. CONSTITUTION:An insulating film O is coated on a semiconductor substrate S, the first electrode M1 made of polycrystalline Si is formed at the prescribed interval thereon to surround the film, and the second electrode M2 of polycrystalline Si is similarly formed on the film O while superposing the electrode M1 and the end. Then, the same conductive type of region having a high density as the substrate S is formed by implanting ions through the film O on the surface layer of the substrate S disposed between the sets of the electrodes M1, M2, and the region S3 is used as the third electrode. Thus, a masking step can be eliminated, but the electrodes may be formed in a self-aligning manner, and the allowable carrier transfer amount can be varied.
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