| 摘要 |
PURPOSE:To increase the optical response speed and the light current level of a photoelectric conversion element, by positively utilizing Schottky barrier junctions, which are formed between amorphous silicon and a metal such as Pt and Au. CONSTITUTION:A pair of metal electrodes E1 and E2 is connected to both ends of a photoelectric conversion part P comprising an amorphous semiconductor. Schottky barrier junctions S1 and S2 are provided at the boundaries between the conversion part P and the electrodes E1 and E2. Positive voltage pulses are applied to the electrode E1 at the same time when light is turned OFF, from the side of the junction S1, on which the light is projected. Then holes corresponding to a process (f) can be injected. In this way, the optical response speed and the light current level of the photoelectric conversion element can be increased. |
