| 摘要 |
PURPOSE:To improve the sensor characteristic and also to decrease the limit at manufacture by forming a semiconductor layer with at least two kinds of elements among silicon, nitrogen, oxygen and carbon so as to block an injecting electric charge. CONSTITUTION:The semiconductor layer is manufactured by mixing a gas including silicon such as silane, tetrafluorosilane, disilane or tetrafluorosilicon and at least two kinds of gases including nitrogen, oxygen or carbon among methane, nitrogen nonooxide, nitrogen dioxide, ethane, propane, acetylene, nitrogen suboxide, nitrogen, anmonium, carbon monooxide, carbon dioxide and oxygen by the plasma CVD method or the light CVD method. Amorphous silicon substrates 42, 45, 62 of 0.3-10mum thickness including hydrogen or fluorine are manufactured by the plasma CVD method, the sputtering method or the light CVD method. In impressing a positive voltage to an electrode in contact with the semiconductor layer, the blocking of the injecting electric charge is improved by mixing a material of the V-b group of the periodic table to the said semiconductor layer.
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