摘要 |
PURPOSE:To obtain a negative type photoresist compsn. superior in sensitivity, dry etching resistance, etc., by incorporating an aromatic azide compd. sensitive to UV rays as a photosensitive agent in a hydroxy-alpha-methylstyrene polymer or copolymer. CONSTITUTION:An intended negative type photoresist compsn. is obtained by mixing (B) an aromatic azido compd. having an azide group decomposable by irradiation of 300-500nm UV rays to produce nitron as a photosensitive agent with (A) polyhydroxy-alpha-methylstyrene and/orhydroxy-alpha-methylstyrene copolymer with a monomer, such as styrene or acrylic acid, preferably, having a weight average mol.wt. of 3,000-100,000, in a B/A mixing weight ratio is 1/100-1/2. The compd. (B) is exemplified by azidopyrene, 2,6-bis(4'-azidobenzal)4-methylcyclohexanone, etc. |