发明名称 NEGATIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain a negative type photoresist compsn. superior in sensitivity, dry etching resistance, etc., by incorporating an aromatic azide compd. sensitive to UV rays as a photosensitive agent in a hydroxy-alpha-methylstyrene polymer or copolymer. CONSTITUTION:An intended negative type photoresist compsn. is obtained by mixing (B) an aromatic azido compd. having an azide group decomposable by irradiation of 300-500nm UV rays to produce nitron as a photosensitive agent with (A) polyhydroxy-alpha-methylstyrene and/orhydroxy-alpha-methylstyrene copolymer with a monomer, such as styrene or acrylic acid, preferably, having a weight average mol.wt. of 3,000-100,000, in a B/A mixing weight ratio is 1/100-1/2. The compd. (B) is exemplified by azidopyrene, 2,6-bis(4'-azidobenzal)4-methylcyclohexanone, etc.
申请公布号 JPS60165649(A) 申请公布日期 1985.08.28
申请号 JP19840022486 申请日期 1984.02.08
申请人 SUMITOMO KAGAKU KOGYO KK 发明人 HANABATAKE MAKOTO;FURUTA AKIHIRO;KONISHI SHINJI;KURATA NOBUYUKI
分类号 C08K5/28;C08K5/17;C08L25/00;C08L25/18;G03C1/73;G03F7/008;G03F7/038 主分类号 C08K5/28
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