| 摘要 |
PURPOSE:To obtain a thin film of high quality by emitting visible or near ultraviolet rays in the absorption zone of halogen gas to reactive gas containing raw material gas and halogen element to excite the halogen gas and colliding it with the raw material gas to activate the raw material gas. CONSTITUTION:The density of raw material gas SiC4H12 is suitably selected, the gas is mixed with O2, the density of reactive gas Cl2 is selected, fed into a reaction chamber, which is evacuated from an outlet 17, and the entire gas pressure is held at 10Torr or higher. When a pulse laser light 19 having 308nm or longer of wavelength is emitted vertically or horizontally to a sample 12, a thin organic film 21 of high quality may be efficiently accumulated. The raw material gas employs silane and organic silanes, hydrogenated Ge and organic Ges, phosphine and organic phosphines, borane and organic boranes, arsine and organic arsines, organic metal compounds and halogen derivatives thereof, which are mixed with O2 or N2. The emitted light is condensed on the sample, and scanned over the entire surface. |
