发明名称 MASK SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT, SURFACE PROTECTING SOLUTION OF WAFER AND METHOD OF USE THEREOF
摘要 PURPOSE:To protect the surfaces of a mask, a wafer and the like by dissolving resin having a plenty of film formability and separability in a solvent, and coating the solution on the mask, wafer and the like. CONSTITUTION:Vinyl chloride-vinyl acetate copolymer, polyvinyl butyral, cellulose derivatives, epoxy resin, polychloroprene and their mixtures are used. A polymer of a composition of 85-93wt% of vinyl chloride and 7-15wt% of vinyl acetate is particularly preferable. A solvent is selected from fatty or romatic hydrocarbon, ketone, alcohols, esters, chlorinated or fluorided hydrocarbon in response to the type or resin, and the amounts of metal impurities are suppressed to prevent the diffusion and contamination of the impurities. A colrant is added to readily discriminate the irregular film. A protective film is sufficient with 0.02-0.3g/cm<3>, but preferably 0.1-0.2g/cm<3> to prevent the disconnection at the separating time. With this configuration, effective surface protective film can be formed on a mask or a wafer.
申请公布号 JPS60165719(A) 申请公布日期 1985.08.28
申请号 JP19840021480 申请日期 1984.02.08
申请人 KIMOTO:KK 发明人 OOTA MASAYOSHI
分类号 H01L21/68;G03F1/00;G03F1/48;H01L21/02;H01L21/027;H01L21/30 主分类号 H01L21/68
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