发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce short circuit current flowing in a sensor amplifier by changing abruptly an input potential of a sensor amplifier after a sensor amplifier output is inverted. CONSTITUTION:When a precharge command signal is inputted, an output signal of a latch circuit is inverted, which makes a transistor 46 nonconductive. At the same time, a transistor for precharge is brought to the conductive condition, and the precharge is started. When the precharge is completed after a certain period has expired and memory is in the conductive condition, a charge to be charged in an input line 10 of a sensor amplifier is discharged, a potential of the input line 10 of a sensor amplifier approximates to that of the 3rd electrode 36 again and intersects a logic level of a sensor amplifier. As a result, an output of a latch circuit is again inverted, a pulse-shaped signal is outputted from a differential circuit, which causes an output of a latch to be inverted, and the transistor 46 is brought to the conductive condition. As a result, the input line 10 of a sensor amplifier is rapidly drawn by a potential of the 2nd electrode, a sensor amplifier input is suddenly changed, and the short circuit current is reduced.</p>
申请公布号 JPS60164991(A) 申请公布日期 1985.08.28
申请号 JP19840020595 申请日期 1984.02.06
申请人 SUWA SEIKOSHA KK 发明人 KATSUNO KUNIO;TSUJI MASUO
分类号 G11C17/18;G11C17/00;(IPC1-7):G11C17/00 主分类号 G11C17/18
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