| 摘要 |
PURPOSE:To sufficiently raise temperature of wafer and obtain a growth layer having excellent crystal characteristic by providing a through hole in such a diameter as is smaller than the wafer to the wafer fixing part of Mo block. CONSTITUTION:A through hole 20 in a smaller diameter than wafer 2 is formed opposing to a heater 3 at the area where a wafer 2 of Mo block 13' is fixed and a stepped portion 25 for fixing wafer is provided along the external circumference of the hole 20 at the surface 14 of block 13'. The wafer 2 is fixed to the stopped portion 25 of the block 13' with a pressing member 22. In this constitution, the wafer 2 is directly heated by the heater 3 and in contact with the block at a point. Therefore, the only the wafer 2 is sufficiently heated up to a high temperature, a heater output is lowered and generation of unwanted gas from heater can be suppressed. Thereby, ambient in the chamber is improved to good condition and a molecular beam epitaxial layer having excellent crystal characteristic can be obtained. |
