Use of pnictide films for wave-guiding in opto-electronic devices.

摘要

An electro-optical device characterised in that it comprises: (A) a semiconductor body: and (B) at least one pnictide-rich layer for guiding light waves in the said body is disclosed. Referring to the accompanying diagram, an electro-optical device 20 may comprise a semiconductor body 22 and pnictide-rich layers 24 and 26. The semiconductor layer of an opto-electronic device has one or more films of a pnictide-rich material deposited thereon. The pnictide has a smaller reflective index than the semiconductor layer. These films provide a wave-guiding effect to light within the semiconductor layer in opto-electronic devices, such as solid state lasers and light emitting diodes and waveguides interconnecting such devices. The invention provides advantages over the prior art.