发明名称 ION PLATING METHOD
摘要 PURPOSE:To obtain a thin film not having a defect such as a pinhole and excellent in uniformity, by melting a plating substance in a high vacuum chamber by a high frequency induction coil and discharging a formed positive ion on a negatively charged base. CONSTITUTION:A new base 6 is mounted to a base plate 7 and a shutter 21 is closed and, after a plating substance 4 is replenished if necessary, a crucible 5 is raised to a proper height in a high frequency induction coil 3. Next, the bell jar 10 attached in a fixed main body 8 is evacuated to 10<-5>-10<-7> and the coil 3 is subsequently energized in this state. That is, high frequency power with 30kHz- 50MHz is inputted to the coil 3 and, when the substance 4 is, for example, a metal, said substance 4 is melted by direct induction heating. In the next step, negative voltage is applied to the base plate 7 while the shutter 21 is opened and the formed positive ion 26 is rapidly attracted to the base by relatively high negative voltage applied to the base plate 7 and discharged to form the thin film 27 of the substance 4 on the base 6.
申请公布号 JPS60165375(A) 申请公布日期 1985.08.28
申请号 JP19840022164 申请日期 1984.02.09
申请人 KISHIMOTO AKIRA 发明人 NAMIKI TSUNEHISA;ISHIBASHI KAZUHISA
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
代理机构 代理人
主权项
地址