| 摘要 |
PURPOSE:To provide the titled vapor deposition apparatus capable of forming the fine pattern of a semiconductor integrated circuit, constituted by arranging a metal conductor having potential positive to a vapor deposition source in a vacuum chamber. CONSTITUTION:An article 6 to be vapor deposited such as a wafer is attached in a bell jar 5 and electron beam generated from an electron gun 8 is bent by an electromagnet 9 to be projected to a vapor deposition source 10 which is, in turn, melted to be vapor deposited to the article 6 to be vapor deposited. At this time, a secondary electron is generated and a vapor deposition amount is controlled by the opening and closing of a shutter 11. Usually, in order to avoid the positive ion generated by projecting electron beam to the vapor deposition source 10 from coming flying to the high voltage cable of secondary electron from the electron gun 8 by a magnetic field, the high voltage cable of the electron gun 8 is covered with a positive ion protective wall 12. This inventive positive potential metal wire 7 is arranged above the vapor deposition source 10 and recovers the secondary electron generated from the vapor deposition source 10 or the floating electron from the electron gun 8. At this time, when the diameter of the metal wire 7 is made fine so as to be reduced to 1mm. or less, the article 6 to be vapor deposited can be prevented from the generation of shade. In this case, if the metal wire 7 is formed into a cross shape or wires are separated at every 60 deg., effect becomes large. |
