| 发明名称 |
Memory device. |
| 摘要 |
<p>A method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states is provided. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state. </p> |
| 申请公布号 |
EP0152689(A2) |
申请公布日期 |
1985.08.28 |
| 申请号 |
EP19840308510 |
申请日期 |
1984.12.06 |
| 申请人 |
THE BRITISH PETROLEUM COMPANY P.L.C. |
发明人 |
HOCKLEY, PETER JOHN;THWAITES, MICHAEL JOHN |
| 分类号 |
G11C11/34;G11C7/00;G11C13/04;G11C17/00;H01L21/8247;H01L27/14;H01L29/788;H01L29/792;H01L31/10;(IPC1-7):G11C8/00;G11C17/06 |
主分类号 |
G11C11/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
