| 摘要 |
PURPOSE:To enable the reduction in occupation area of the output part of the titled device by a method wherein the base of an output transistor and the drain of a drive transistor are common. CONSTITUTION:This IC makes an N-type semiconductor substrate 11 as the collector, which contains an N-P-N bi-polar transistor with a P-type base 16 and an N-type emitter 17. A P-channel transistor makes the P-base 16 as the drain and a P-type region 13 formed by alienation from it as the source, and is composed of the P-base 16 and source 13 and a gate electrode 14 formed on the space therebetween via insulation film 12. The occupation area of the output part can be reduced by making the base of the output transistor in common to the drain of the drive transistor in such a manner. Besides, because of no need of wiring these transistors, the degree of design freedom becomes larger. |
