| 摘要 |
PURPOSE:To etch a sample in an anisotropic manner by supplying reactive gas which contains halogen element and film forming gas to a vessel which contains a sample, vertically emitting selectively a light for ionizing the reactive gas. CONSTITUTION:P-added polysilicon 33 is superposed through a SiO2 film 32 on an Si substrate 31, a sample 12 coated with a resist mask 34 is disposed in a vacuum chamber 11, and Cl2 and Si(CH3)4 are supplied. An ultraviolet rays 17 having 300-400nm of wavelength is emitted, a polysilicon 33 is etched with produced Cl radical, and a thin film 35 of Si(CH3)2Cl2 is accumulated. The accumulating reaction and the etching reaction compete, thereby performing an anisotropic etching without an undercut. The sample is a semiconductor material, a high melting point metal or its silicide, and the mask may be separaely formed. The film forming gas employs organic metallic compound such as organic silane, organic Ge or its halogen derivatives or silane phosphine. According to this method, the anisotropic etching can be performed without irradiation damage. |
