| 发明名称 |
Process for preparing single crystal |
| 摘要 |
A process for preparing a single crystal comprising drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600 DEG C. at a reduced pressure or in vacuo, by which a single crystal having a dislocation density of 1.5x104 cm2 or less is prepared.
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| 申请公布号 |
US4537652(A) |
申请公布日期 |
1985.08.27 |
| 申请号 |
US19840617563 |
申请日期 |
1984.06.05 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP. |
发明人 |
KAWASAKI, AKIHISA;TADA, KOHJI;KOTANI, TOSHIHIRO;MIYAZAWA, SHINTARO |
| 分类号 |
C30B15/00;C30B15/14;C30B27/02;H01L21/208;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
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