SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To make the high integration and acceleration of an integrated circuit simultaneously feasible by a method wherein a laminated layer type MOS device composed of a MOSFET formed on a silicon substrate and another MOSFET formed on a polycrystalline silicon jointly provided with a gate electrode as well as the other MOSFET provided with metallic or metallic silicide gate electrode are formed. CONSTITUTION:An N type impurity region 202 and a P type impurity region 203 are formed on a silicon substrate 201 and then thick SiO2 films 204 and SiO2 films 205 are selectively formed on the surface of the substrate 201. Firstly a poly Si electrode.wiring 206 is formed on the region to be the lower part of a laminated layer structure. Then after forming another thin SiO2 film 207 on the surface of poly Si electrode.wiring 206, as As ion 209 is implanted in the SiO2 films 205 utlizing a photoresist 209 as a mask to form a low resistant N type diffusion layer. Secondly a window is opened in a part of the low resistant N type diffusion layer to implant phosphorus ion 210 in the window. Finally another poly Si wiring 212 containing laminated element is formed and then the SiO2 films 205 may be removed to form the other SiO2 films 214 again.