| 摘要 |
PURPOSE:To make the element characteristics excellent improving moisture resistance by a method wherein a main body of photoelectric conversion element formed on a substrate is covered with transparent fluorine resin as well as a protecting film by means of sputtering process utilizing fluorine resin as target. CONSTITUTION:The first electrode 22 is selectively formed on an insulating glass substrate 21 by CVD process of Cr etc. while an amorphous Si thin film 23 containing hydrogen is formed on the electrode 22. This thin film 23 is formed by e.g. plasma CVD process. The second transparent electrode 24 made of In2O3 ITO etc. is formed on the amorphous Si thin film 23. Such a constitution is similar to any conventional photosensor with the exception that a protecting film made of fluorine resin is formed. In other words, the main body of photosensor composed of the amorphous Si thin film 23, electrodes 22, 24 is coated with a protecting film 25 made of fluorine resin by means of high frequency sputtering process. |
