| 摘要 |
PURPOSE:To flatten the surface of a wiring layer by a method wherein, after the lower wiring layer has been formed, a connection part wiring layer is formed on the pertinent part of the through hole located on said wiring layer, an ion etching is performed on the interlayer insulating film which is formed subsequently, and then the upper wiring layer is formed. CONSTITUTION:An aluminum wiring layer 3 is selectively formed on the silicon oxide film 2 of a silicon semiconductor substrate 1, and after an aluminum layer 6a has been coated on the whole surface of said wiring layer 3, a resist film 7 is formed by patterning on the partinent part of the through hole. The aluminum layer 6a is removed by etching until it is just-met, a connection part wiring layer 6b is left on the pertinent part only of the through hole on the wiring layer 3, and after a resist layer 7 has been removed completely, an interlayer insulating film 5 is formed. Then, an ion etching (8) is performed on the interlayer insulating film 5 untilthe surface of the connection part wiring layer 6b will be exposed, an aluminum wiring layer 4 is formed, and the wiring layers 3 and 4 are electrically connected using a connection part wiring layer 6b. As a result, the defective connection and the disconnection of wire generating from the stepping on the through hole can be prevented. |
