| 摘要 |
PURPOSE:To enable the efficient growth of a vapor phase deposition film having a uniform thickness, by providing a reaction chamber in which at least a part of a light irradiating window is composed of a substrate made of a light-transmissive material on which the vapor phase deposition film is to be deposited and by supplying a reaction gas with optical energy through the light-transmissive substrate. CONSTITUTION:A light irradiating window provided in a reaction chamber 1 is composed of two piles of a quartz plate 2 transmitting ultraviolet light and a light-transmissive substrate 3. The light-transmissive substrate 3 is slipped into the reaction chamber 1 to be superposed on the inner face of the quartz plate 2 by guiding and grasping means 4 provided on the inner wall of the chamber 1. The inner face of the substrate 3 is exposed to irradiated heat rays 7 so as to be held at a temperature of 300-400 deg.C. Ultraviolet light rays 11 are projected on the light transmitting window under the presence of a reaction gas 10 introduced through a reaction gas introducing orifice 8 and discharged through a discharge orifice 9. The ultraviolet light rays 11 are irradiated to the reactive gas 10 within the reaction chamber 1 through the quartz plate 2 and the light-transmissive substrate 3 so as to promote the optical vapor growth reaction. |
