发明名称 Nonvolatile memory cell
摘要 A static random access memory array cell that is non-volatile because when power fails a floating gate is charged or not charged depending on the information content of the cell. When power is restored, all cells are written to a positive state except those with charged floating gates so that the information content of the array is recreated.
申请公布号 US4538246(A) 申请公布日期 1985.08.27
申请号 US19820437608 申请日期 1982.10.29
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 WANG, SAMUEL T.;HU, CHENMING;SHUM, YING
分类号 G11C11/405;G11C14/00;(IPC1-7):G11C11/40 主分类号 G11C11/405
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