发明名称 |
Nonvolatile memory cell |
摘要 |
A static random access memory array cell that is non-volatile because when power fails a floating gate is charged or not charged depending on the information content of the cell. When power is restored, all cells are written to a positive state except those with charged floating gates so that the information content of the array is recreated.
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申请公布号 |
US4538246(A) |
申请公布日期 |
1985.08.27 |
申请号 |
US19820437608 |
申请日期 |
1982.10.29 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
WANG, SAMUEL T.;HU, CHENMING;SHUM, YING |
分类号 |
G11C11/405;G11C14/00;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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