| 摘要 |
PURPOSE:To prevent reduction in input resistance by a method wherein a recessed part is formed on the dielectric film provided between the gate and the semiconductor element of an MISFET, and a metal wiring is formed between said gate and semiconductor element in the state wherein a photoresist is left on the recessed part. CONSTITUTION:An SiO2 film 19 is formed between an MISFET12 and a PIN photodiode 13. Then, a recessed part 28 is formed using a photoresist 27 as a mask, and a semiconductor InP substrate 11 is removed by performing an etching in the depth of approximately 1mum. After the photoresist 27 has been removed, a photoresist 29 is applied again. Then, a patterning is performed in such a manner that the photoresist 29 is left on the recess 28 only, and after Al has been vapor-deposited, an electrode 24 is formed using a photoresist. Subsequently, when the photoresist is dissolved, a part of the electrode 24 takes the form wherein it comes up from the semiconductor InP substrate 11 at the recessed part 28, and the current running to an electrode 22 from an electrode 20 is shut off, because an inversion layer is not formed on the substrate located under the electrode 24, thereby enabling to prevent the reduction in input resistance of the MISFET12. |
