| 发明名称 |
Process for producing CMOS structures with Schottky bipolar transistors |
| 摘要 |
A process is disclosed for making CMOS transistors in combination with self-aligned fully oxide isolated Schottky clamped bipolar transistors.
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| 申请公布号 |
US4536945(A) |
申请公布日期 |
1985.08.27 |
| 申请号 |
US19840601195 |
申请日期 |
1984.04.17 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
GRAY, BRUCE;SOUNDARANATHAN, KASIVISVANATHA;VANGIESON, FRANKLIN D. |
| 分类号 |
H01L21/285;H01L21/331;H01L21/76;H01L21/762;H01L21/8222;H01L21/8249;H01L27/06;H01L27/082;H01L29/47;H01L29/73;H01L29/732;H01L29/872;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/285 |
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