| 摘要 |
PURPOSE:To microscopically form a pattern by a method wherein a non-photosensitive intermediate layer is formed on the surface of the layer to be etched located on a semiconductor substrate, an aperture is provided on the resist coated on the surface of said intermediate layer, a vitreous mask layer is formed on the aperture part, and an etching is performed on the resist and the intermediate layer. CONSTITUTION:An intermediate layer is formed on the whole surface of a semiconductor substrate 1, a resist is coated on the surface of the layer 4, the resist part 5 whereon light is made to irradiated is removed by performing exposure and developing processes, and an aperture part 5a is formed. Then, a mask layer 6 is formed on the aperture part 5a, and the intermediate layer 4 and the resist 5 are removed by peforming an anisotripic dry etching using the layer 6 as a mask. Besides, after an aluminum layer has been etched, the intermediate layer 4 and the mask layer 6 are exfoliated. According to this constitution, light is absorbed into the intermediate layer even when the light is made to irradiate on the resist 5, and the generation of the so-called diffractional phenomenon caused by the lower aluminum layer 3 is prevented. |
