| 摘要 |
PURPOSE:To provide an element with a function to control photooutput of either laser beams or natural light corresponding to any photoinput by a method wherein a deep trap at high concentration is formed between a light emitting layer and the first conductive ohmic electrode as well as on a position wherein a part of emitted light and signal photoinput are inputted. CONSTITUTION:A P type GaAs light receiving layer 21, a P type Al0.3Ga0.7As layer 22, a P type GaAs light emitting layer 23, an N type Al0.3Ga0.7As layer 24 are successively formed on a semiinsulating GaAs substrate 20 by means of liquid epitaxial process. Firstly parts of the P type Al0.3Ga0.7As layer 22, the P type GaAs layer light emitting layer 23 and the N type Al0.3Ga0.7As layer 24 are left into mesa type removing all other parts by etching process. Secondly a light inputting window 25 concentric circular to the mesa is left on the surface of GaAs lightreceiving layer 21 to form other P type ohmic electrode 26 made of AuZn alloy. Finally a light outputting window 27 is left on the central surface part of N type Al0.3Ga0.7As layer 24 to form other N type ohmic electrode 28 made of AuGeNi alloy. |
