| 摘要 |
PURPOSE:To prevent the disconnection of wiring layers by lessening stepwise differences by forming an insulation film having an inclined surface on the side wall of a contact hole. CONSTITUTION:An SiO2 interlayer insulation film 2 is deposited on the surface of an Si substrate 1 and then patterned with a photosensitive resin 3, and the insulation film 2 is anisotropically etched by using this resin pattern as a mask, thus forming a contact hole 6. The second insulation film 5 made of SiO2 is deposited on the surface of the insulation film 2 including the contact hole 6, and the insulation film 5 is anisotropically etched and thus left on the side wall of the interlayer insulation film 2 where the contact hole 6 is to be formed. The insulation film 5 is formed so as to have an inclined surface against the surface of the substrate 1, and then a conductor film 4 is deposited on the surface. Since the side wall is formed in tapered form, the disconnection in a wiring layer of the upper layer can be prevented, resulting in the improvement in yield and reliability. |
