| 摘要 |
PURPOSE:To improve an element drive method at the time of reading signals, to read out completely signals remaining unread in a diode and to prevent the generation of after-images by making transfer gate conductive twice or more during a vertical branking period. CONSTITUTION:A vertical CCD shift register 2 is formed by gate electrodes 8-1, 8-2..., which are formed with a low-density diffusion layer 9 and a gate oxide film 10, on a substrate 11 forming a CCD solid-state image pickup element. Clock pulses phiV1-phiV4 to repeat high and low voltage levels twice or more during a vertical branking period are impressed on respective electrodes 8-1, 8-2..., which are made conductive twice or more during a vertical branking period. A drive method of an image pickup element is improved at the time of reading out a signal charge, and the residual of the read-out signal charge is eliminated and the generation of after-images can be prevented.
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